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PIN Photodiodes
PNZ313 (PN313)
Silicon planar type
For optical control systems
7.00.5
Unit: mm
Anode mark (1.6) Device center
(5.0)
Features
* Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.) * High sensitivity, high reliability * Peak emission wavelength matched with infrared light emitting diodes: p = 940 nm (typ.) * Wide detection area, wide half-power angle: = 65 (typ.) * Adoption of visible light cutoff resin
8.00.5
13 min.
2.30.3
2-1.20.15 2-0.60.15 0.410.15
2
1 5.080.25
Absolute Maximum Ratings
Parameter Reverse voltage Power dissipation Operating ambient temperature Storage temperature
Ta = 25C
VR PD Topr Tstg 30 100 -30 to +80 -40 to +80 V mW C C
2.80.3
Symbol
Rating
Unit
1: Cathode 2: Anode LSTFR102NC-001 Package
Electrical-Optical Characteristics Ta = 25C 3C
Parameter Dark current Photocurrent *1 Peak emission wavelength Rise time *2 Fall time
*2
Symbol ID IL p tr tf tr tf Ct VR = 10 V
Conditions VR = 10 V, L = 1 000 lx VR = 10 V VR = 10 V, RL = 1 k VR = 10 V, RL = 100 k VR = 0 V, f = 1 MHz The angle from which photocurrent becomes 50%
Min
Typ 5
Max 50
Unit nA A nm ns ns s s pF
35
50 940 50 50 5 5 70 65
Rise time *2 Fall time *2 Terminal capacitance Half-power angle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit
Sig. in P = 800 nm 50 RL VR = 10 V (Input pulse) Sig. out (Output pulse) td tr tf 90% 10% td: Delay time tr: Rise time (Time required for the collector photocurrent to increase from 10% to 90% of its final value) tf: Fall time (Time required for the collector photocurrent to decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004 SHE00033BED
1
PNZ313
PD Ta
120 103 VR = 10 V Ta = 25C T = 2 856 K
IL L
103 VR = 10 V
ID T a
100
Power dissipation PD (mW)
102
102
Photocurrent IL (A)
80
60
10
Dark current ID (nA)
102 103 104
10
40
1 20
1
0 -30
0
20
40
60
80
100
10-1 10
10-1 -40
0
40
80
Ambient temperature Ta (C)
Illuminance L (lx)
Ambient temperature Ta (C)
IL Ta
160 VR = 10 V L = 1 000 lx T = 2 856 K
Spectral sensitivity characteristics
100 VR = 10 V Ta = 25C 100
Directivity characteristics
Relative photocurrent IL (%)
80
80
Relative sensitivity S (%)
120
Relative sensitivity S (%)
800 1 000 1 200
60
60
80
40
40
40
20
20
0 -40
0
40
80
0 600
0
80
40
0
40
80
Ambient temperature Ta (C)
Wavelength (nm)
Half-power angle ()
Ct VR
100 102 Sig. in
tr , tf RL
VR = 10 V Sig. out RL 90% 10% 102
ID V R
Terminal capacitance Ct (pF)
80
Rise time tr , Fall time tf (s)
10 50
tr
td
tf
Dark current ID (nA)
1 10 102
10
60
1
40
1
10-1
20
0 -2 10
10-1
1
10
102
10-2 -1 10
10-1
0
8
16
24
32
40
48
Reverse voltage VR (V)
Load resistance RL (k)
Reverse voltage VR (V)
2
SHE00033BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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